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Silicon Dioxide

Chemical Formula: 

There are various processing techniques to grow or deposite silicon dioxide available.

PECVD deposited silicon dioxide in the ccp system is produced by the reaction between silane (5% silane in He) and N2O. In the HDP system the reactants are silane and O2. (hdpcvd, ccp-dep)

LPCVD deposited silicon dioxide is a high deposition rate, low temperature process (compared to thermally grown oxides).  Either silane or TEOS (Tetra EthOxy Silane or Tetra Ethyl OrthoSilicate) can be used as a precursor for SiO2. (teos2, thermcoLTO, tylanbpsg)

Equipment Tabs

Deposition Equipment
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