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PECVD Equipment Summary

This is a summary of the Plasma Enhanced Chemical Vapor Deposition (PECVD) Equipment in the SNF labs.

PECVD Equipment Summary

Purpose Cleanliness Gases Cleaning Required Substrate Size Maximum Load Process Temperature Range Material Thickness Range Notes
EPI (CVD), Low Pressure (LP) CVD, Hydrogen (H2) Annealing, Doping, Plasma Enhanced (PE) CVD AMAT Centurion Epitaxial System (epi2) Clean Pre-Diffusion Clean
600 °C - 1200 °C
50.00 Å - 3.00 μm

N and P doping available- intrinsic to 5E19 Operating pressure range is 5-300Torr

Plasma Enhanced (PE) CVD PlasmaTherm Shuttlelock PECVD System (ccp-dep) All 4
100 °C - 350 °C
100.00 Å - 4.00 μm

To maintain cleanliness level, cleans of both the chamber and wafers are required prior to...

Plasma Enhanced (PE) CVD PlasmaTherm Versaline HDP CVD System (hdpcvd) All 1
50 °C - 150 °C
500.00 Å - 4.00 μm

To maintain cleanliness level there are cleans required for both the chamber and wafers prior to...

Last modified: 30 Jan 2023